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| Data Sheet No.PD 60151-J IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown 70m (max) 50V 12A 1.5s Description The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET (R) POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Ton/Toff Packages 8-Lead SOIC IPS031G Typical Connection 16-Lead SOIC IPS032G (Dual) Load R in series (if needed) D IN control S Q S Logic signal (Refer to lead assignment for correct pin assignment) www.irf.com 1 IPS031G/IPS032G 31 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness. All Sources leads of each mosfet must be connected together to get full current capability Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max. continuous current (1) (rth=125oC/W) IPS031G (for all sd mosfets, rth=85oC/W) IPS032G Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) Pd Maximum power dissipation(1) (rth=125oC/W) IPS031G (for all Pd mosfets, rth=85oC/W) IPS032G ESD1 ESD2 T stor. Tj max. Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature Min. -- -0.3 -10 -- -- -- -- -- -- -- -55 -40 Max. 47 7 +10 1.4 2 15 1 1.5 4 0.5 150 150 Units V mA Test Conditions A W kV o C=100pF, R=1500, C=200pF, R=0, L=10H C Thermal Chacteristics Symbol Parameter Rth1 Thermal resistance Rth2 Thermal resistance Rth1 Thermal resistance (2 mos on) (2 mosfets on) Rth2 Thermal resistance (1 mos on) (1 mosfet on) Rth3 Thermal resistance (2 mos on) (2 mosfets on) with standard footprint with 1" square footprint with standard footprint with standard footprint -- with 1" square footprint -- 60 -- 100 -- Min. -- -- -- Typ. 100 65 85 Max. Units Test Conditions -- -- -- o SOIC-8 C/W SOIC-16 (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS031G/IPS032G Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Continuous Drain to Source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) IPS031G (TAmbient = 85oC, IN = 5V, rth = 85oC/W, Tj = 125oC) IPS032G Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-I sc (2) Max. frequency in short circuit condition (Vcc = 14V) Vds (max) VIH VIL Ids Min. -- 4 0 -- -- 0.2 -- 0 Max. 35 6 0.5 2.2 1.65 5 1 1 Units V A k S kHz Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Rds(on) Idss @Tj=25oC Min. 20 -- 0 0 47 50 7 1 25 50 Typ. 45 75 0.5 5 52 53 8.1 1.6 90 130 Max. Units Test Conditions 60 100 25 50 56 60 9.5 2 200 250 m Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC A Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered ON state resistance Tj = 25oC ON state resistance Tj = 150 oC Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current Idss2 @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vth Iin, -on Iin, -off V A Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5 (IPS031), Resistive Load = 3 (IPS031S), Rinput = 50, 100s pulse,Tj = 25oC, (unless otherwise specified). Symbol Parameter Ton Tr Trf T off Tf Qin Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Min. 0.05 0.4 -- 0.8 0.5 -- Typ. Max. Units Test Conditions 0.3 1 8 2 1.5 1.1 0.6 2 -- 3.5 2.5 -- See figure 2 s See figure 2 nC Vin = 5V www.irf.com 3 IPS031G/IPS032G Protection Characteristics Symbol Parameter T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) Min. -- 10 1.5 2 -- Typ. 165 14 2.3 10 400 Max. Units Test Conditions -- 18 3 40 -- o C A V s J See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V Functional Block Diagram All values are typical DRAIN 47 V 300 200 k IN 8.1 V 80 A S R Q Q I sense T > 165c I > 1sd SOURCE Lead Assignments D D D D D1 D1 D1 D1 D2 D2 D2 D2 1 1 S S S In S1 S1 S1 I1 S2 S2 S2 I2 8 Lead SOIC 16 Lead SOIC (Dual) IPS032G Part Number IPS031G 4 www.irf.com IPS031G/IPS032G Vin 5V 0V Vin 10 % t < T reset I shutdown t > T reset 90 % Ids Isd Tr-in 90 % Ids T Tsd (165 c) 10 % Td on tr T shutdown Td off tf Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin Rem : V load is negative during demagnetization L R D IN S V load + 14 V - Ids Vds clamp Vin ( Vcc ) 5v 0v Vds Ids Vds ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5 IPS031G/IPS032G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 Tj = 25oC Tj = 150 C o 200% 180% 160% 140% 120% 100% 80% 60% 40% 20% 0% -50 -25 0 25 50 75 100 125 150 175 Figure 5 - Rds ON (m) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj (oC) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 ton delay rise tim e 130% final rdson 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 toff delay fall tim e 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6 www.irf.com IPS031G/IPS032G 100 100 delay on rise tim e 130% rdson 10 10 delay off fall tim e 1 1 0 .1 10 100 1000 10000 0 .1 10 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) Vs IN Resistor () Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor () 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Isd 25C Ilim 25C 20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 11 - Current Iimimitation & I shutdown (A) Vs Vin (V) Figure 12 - I shutdown (A) Vs Temperature (oC) www.irf.com 7 IPS031G/IPS032G 10 8 6 4 2 0 -50 rth = 50C/W SO8 Std. footprint 100C/W 10 8 6 4 2 0 -50 SO16 Std. footprint 1 m osfet on SO8 Std. footprint 2 m osfets on 0 50 100 150 200 0 50 100 150 200 Figure 13a - Max.Cont. Ids (A) Vs Amb. Temperature (oC) - IPS031G Figure 13b - Max.Cont. Ids (A) Vs Amb. Temperature (oC) - IPS032G 100 T = 25C T = 100 C 100 single pulse 100 Hz rth=100C/W dT=25C 1kHz rth=100C/W dT=25C 10 10 1 1 Vbat = 14 V Tjini = T sd 0.1 0 .0 1 0 .1 1 10 100 Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031G/IPS032G Figure 15 - Iclamp (A) Vs Inductive Load (mH) 8 www.irf.com IPS031G/IPS032G 1 00 100 rth SO8 std footprint 10 10 1 1 Single pulse Single pulse 0 .1 0 .1 0 .0 1 0 .0 1 rth SO16 std footprint 1 mosfet active rth SO16 std footprint 2 mosfets active Figure 16a - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS031G Figure 16b - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS032G 200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Iin,on Iin,off 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 Vds clam p @ Isd Vin clam p @ 10m A 0 25 50 75 100 125 150 Figure 17 - Input current (A) Vs Tj (oC) Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) www.irf.com 9 IPS031G/IPS032G 16 14 12 10 8 6 4 2 0 -50 Treset rise tim e fall tim e -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and Treset KI Vs Tj (oC) Case Outlines D A 5 B F OOT PRINT 8X 0.72 [.028] DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 c 6 E 8 7 6 5 H 0.25 [.010] A 6.46 [.255] D E e e1 H K L 8X 1.78 [.070] 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 3X 1.27 [.050] y K x 45 y 0.10 [.004] 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010]. 7 DIMENSION IS T HE LE NGTH OF LEAD FOR SOLDE RING TO A SUBS TRAT E. 8-Lead SOIC 01-6027 01-0021 11 (MS-012AA) 10 www.irf.com IPS031G/IPS032G 16 -Lead SOIC (narrow body) 01-6018 01-3064 00 (MS-012AC) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 www.irf.com 11 |
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